cystech electronics corp. spec. no. : c316n3 issued date : 2008.01.15 revised date : 2013.10.31 page no. : 1/7 BTC2030N3 cystek product specification general purpose npn epitaxial planar transistor BTC2030N3 features ? high breakdown voltage, bv ceo 200v ? large continuous collector current capability ? low collector saturation voltage ? pb-free lead plating and halogen-free package symbol outline BTC2030N3 sot-23 b base c collector e emitter ordering information device package shipping sot-23 3000 pcs / tape & reel BTC2030N3-0-t1-g (pb-free lead plating and halogen-free package) environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t1 : 3000 pc s / tape & reel, 7? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c316n3 issued date : 2008.01.15 revised date : 2013.10.31 page no. : 2/7 BTC2030N3 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 280 v collector-emitter voltage v ceo 200 v emitter-base voltage v ebo 6 v collector current i c 1 a base current i b 0.5 a power dissipation (t a =25 c) p d 225 (note) mw power dissipation (t c =25 c) p d 560 mw thermal resistance, junction to ambient r ja 556 (note) c/w thermal resistance, junction to case r jc 223 c/w junction temperature tj 150 c storage temperature tstg -55~+150 c note : free air condition characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 280 - - v i c =100 a bv ceo 200 - - v i c =10ma bv ebo 6 - - v i e =10 a i cbo - - 100 na v cb =250v i ebo - - 100 na v eb =6v *v ce(sat) - - 0.1 v i c =100ma, i b =10ma *v ce(sat) - - 0.2 v i c =250ma, i b =25ma *v ce(sat) - 0.2 0.5 v i c =500ma, i b =50ma *v be(sat) - - 0.95 v i c =250ma, i b =25ma *v be(on) - - 0.9 v v ce =5v, i c =250ma *h fe 1 100 - - - v ce =5v, i c =1ma *h fe 2 100 - 320 - v ce =5v, i c =200ma *h fe 3 10 - - - v ce =5v, i c =1a f t 75 - - mhz v ce =10v, i c =50ma, f=100mhz cob - - 10 pf v cb =10v, i e =0a,f=1mhz *pulse test: pulse width 380 s, duty cycle 2%
cystech electronics corp. spec. no. : c316n3 issued date : 2008.01.15 revised date : 2013.10.31 page no. : 3/7 BTC2030N3 cystek product specification typical characteristics current gain vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) current gain---hfe vce=2v vce=5v saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 collector current---ic(ma) saturation voltage---(v) ic=10ib vcesat ic=20ib saturation voltage vs collector current 100 1000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) vbesat@ic=10ib on voltage vs collector current 100 1000 1 10 100 1000 collector current---ic(ma) on voltage---(mv) vbeon@vce=5v power derating curve 0 0.1 0.2 0.3 0.4 0.5 0.6 0 50 100 150 200 case temperature---tc() power dissipation---pd(w)
cystech electronics corp. spec. no. : c316n3 issued date : 2008.01.15 revised date : 2013.10.31 page no. : 4/7 BTC2030N3 cystek product specification recommended soldering footprint
cystech electronics corp. spec. no. : c316n3 issued date : 2008.01.15 revised date : 2013.10.31 page no. : 5/7 BTC2030N3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c316n3 issued date : 2008.01.15 revised date : 2013.10.31 page no. : 6/7 BTC2030N3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds ? time(ts min to ts max ) time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c316n3 issued date : 2008.01.15 revised date : 2013.10.31 page no. : 7/7 BTC2030N3 cystek product specification sot-23 dimension inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1102 0.1204 2.80 3.04 j 0.0032 0.0079 0.08 0.20 b 0.0472 0.0669 1.20 1.70 k 0. 0118 0.0266 0.30 0.67 c 0.0335 0.0512 0.89 1.30 l 0.0335 0.0453 0.85 1.15 d 0.0118 0.0197 0.30 0.50 s 0.0830 0.1161 2.10 2.95 g 0.0669 0.0910 1.70 2.30 v 0.0098 0.0256 0.25 0.65 h 0.0000 0.0040 0.00 0.10 l1 0. 0118 0.0197 0.30 0.50 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . style : pin 1.base 2.emitter 3.collector 3-lead sot-23 plastic surface mounted package cystek package code: n3 marking: product code date code: year+month year: 3 2003, 4 2004 month: 1 1, 2 2, ??? cb 9 9, a 10, b 11, c 12
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